BUK953R2-40E Todos los transistores

 

BUK953R2-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK953R2-40E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 234 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
   Carga de la puerta (Qg): 69.5 nC
   Tiempo de subida (tr): 73 nS
   Conductancia de drenaje-sustrato (Cd): 875 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
   Paquete / Cubierta: TO-220AB

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BUK953R2-40E Datasheet (PDF)

 ..1. Size:217K  nxp
buk953r2-40e.pdf

BUK953R2-40E
BUK953R2-40E

BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 3.1. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf

BUK953R2-40E
BUK953R2-40E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

 7.1. Size:214K  nxp
buk953r5-60e.pdf

BUK953R2-40E
BUK953R2-40E

BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:71K  philips
buk9535-55a buk9635-55a.pdf

BUK953R2-40E
BUK953R2-40E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

 8.2. Size:53K  philips
buk9535-55 2.pdf

BUK953R2-40E
BUK953R2-40E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 34 Alow on-state resist

 8.3. Size:337K  philips
buk9535-100a buk9635-100a.pdf

BUK953R2-40E
BUK953R2-40E

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

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