All MOSFET. BUK953R2-40E Datasheet

 

BUK953R2-40E Datasheet and Replacement


   Type Designator: BUK953R2-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 234 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 875 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-220AB
 

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BUK953R2-40E Datasheet (PDF)

 ..1. Size:217K  nxp
buk953r2-40e.pdf pdf_icon

BUK953R2-40E

BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 3.1. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK953R2-40E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

 7.1. Size:214K  nxp
buk953r5-60e.pdf pdf_icon

BUK953R2-40E

BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK953R2-40E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

Datasheet: BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E , BUK952R8-60E , EMB04N03H , BUK953R5-60E , BUK9540-100A , BUK954R4-80E , BUK954R8-60E , BUK956R1-100E , BUK958R5-40E , BUK9611-80E , BUK9614-60E .

History: ME60P06T-G | CJPF05N65 | IRF820LPBF | CSD19532Q5B | ELM13407CA-S | STY34NB50 | SLD80R850SJ

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