BUK953R2-40E PDF and Equivalents Search

 

BUK953R2-40E Specs and Replacement

Type Designator: BUK953R2-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 234 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 875 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-220AB

BUK953R2-40E substitution

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BUK953R2-40E datasheet

 ..1. Size:217K  nxp
buk953r2-40e.pdf pdf_icon

BUK953R2-40E

BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒

 3.1. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK953R2-40E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A... See More ⇒

 7.1. Size:214K  nxp
buk953r5-60e.pdf pdf_icon

BUK953R2-40E

BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒

 8.1. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK953R2-40E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo... See More ⇒

Detailed specifications: BUK9508-55A, BUK9509-55A, BUK9515-60E, BUK9516, BUK951R6-30E, BUK9528-55A, BUK952R3-40E, BUK952R8-60E, AON7403, BUK953R5-60E, BUK9540-100A, BUK954R4-80E, BUK954R8-60E, BUK956R1-100E, BUK958R5-40E, BUK9611-80E, BUK9614-60E

Keywords - BUK953R2-40E MOSFET specs

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