BUK953R2-40E Specs and Replacement
Type Designator: BUK953R2-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 234 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 875 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-220AB
BUK953R2-40E substitution
- MOSFET ⓘ Cross-Reference Search
BUK953R2-40E datasheet
buk953r2-40e.pdf
BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf
BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A... See More ⇒
buk953r5-60e.pdf
BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
buk9535-55a buk9635-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo... See More ⇒
Detailed specifications: BUK9508-55A, BUK9509-55A, BUK9515-60E, BUK9516, BUK951R6-30E, BUK9528-55A, BUK952R3-40E, BUK952R8-60E, AON7403, BUK953R5-60E, BUK9540-100A, BUK954R4-80E, BUK954R8-60E, BUK956R1-100E, BUK958R5-40E, BUK9611-80E, BUK9614-60E
Keywords - BUK953R2-40E MOSFET specs
BUK953R2-40E cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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