BUK953R5-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 34 Alow on-state resist

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t