All MOSFET. BUK953R5-60E Datasheet

 

BUK953R5-60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK953R5-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 293 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 822 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO-220AB

 BUK953R5-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK953R5-60E Datasheet (PDF)

 ..1. Size:214K  nxp
 buk953r5-60e.pdf

BUK953R5-60E BUK953R5-60E

BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 7.1. Size:325K  philips
 buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf

BUK953R5-60E BUK953R5-60E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

 7.2. Size:217K  nxp
 buk953r2-40e.pdf

BUK953R5-60E BUK953R5-60E

BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:71K  philips
 buk9535-55a buk9635-55a.pdf

BUK953R5-60E BUK953R5-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

 8.2. Size:53K  philips
 buk9535-55 2.pdf

BUK953R5-60E BUK953R5-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 34 Alow on-state resist

 8.3. Size:337K  philips
 buk9535-100a buk9635-100a.pdf

BUK953R5-60E BUK953R5-60E

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

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