BUK9E1R6-30E Todos los transistores

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 buk9e1r6-30e.pdf

BUK9E1R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 7.1. Size:226K  nxp
 buk9e1r9-40e.pdf

BUK9E1R9-40E N-channel 40 V, 1.9 m logic level MOSFET in I PAK 5 June 2013 Product data sheet 1. General description Logic level N-channel MOSFET in a I2PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche

 8.1. Size:207K  nxp
 buk9e15-60e.pdf

BUK9E15-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive

 9.1. Size:358K  philips
 buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr

 9.2. Size:199K  philips
 buk9e06-55a.pdf

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.3. Size:325K  philips
 buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A

 9.4. Size:318K  philips
 buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application

 9.5. Size:339K  philips
 buk9e08-55b.pdf

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.6. Size:115K  philips
 buk95 buk96 buk9e06-55b.pdf

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compli

 9.7. Size:210K  nxp
 buk9e8r5-40e.pdf

BUK9E8R5-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.8. Size:214K  nxp
 buk9e3r2-40e.pdf

BUK9E3R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.9. Size:211K  nxp
 buk9e2r8-60e.pdf

BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.10. Size:213K  nxp
 buk9e4r4-80e.pdf

BUK9E4R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.11. Size:211K  nxp
 buk9e2r3-40e.pdf

BUK9E2R3-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.12. Size:208K  nxp
 buk9e4r9-60e.pdf

BUK9E4R9-60E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive a

 9.13. Size:210K  nxp
 buk9e3r7-60e.pdf

BUK9E3R7-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.14. Size:968K  nxp
 buk9e08-55b.pdf

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.15. Size:209K  nxp
 buk9e6r1-100e.pdf

BUK9E6R1-100E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti