Справочник MOSFET. BUK9E1R6-30E

 

BUK9E1R6-30E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9E1R6-30E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 113 nC
   trⓘ - Время нарастания: 127 ns
   Cossⓘ - Выходная емкость: 1840 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0014 Ohm
   Тип корпуса: I2PAK

 Аналог (замена) для BUK9E1R6-30E

 

 

BUK9E1R6-30E Datasheet (PDF)

 ..1. Size:216K  nxp
buk9e1r6-30e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E1R6-30EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 7.1. Size:226K  nxp
buk9e1r9-40e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E1R9-40EN-channel 40 V, 1.9 m logic level MOSFET in IPAK5 June 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in a I2PAK package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche

 8.1. Size:207K  nxp
buk9e15-60e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E15-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 9.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

 9.2. Size:199K  philips
buk9e06-55a.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.3. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

 9.4. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

 9.5. Size:339K  philips
buk9e08-55b.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.6. Size:115K  philips
buk95 buk96 buk9e06-55b.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli

 9.7. Size:210K  nxp
buk9e8r5-40e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E8R5-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.8. Size:214K  nxp
buk9e3r2-40e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E3R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.9. Size:211K  nxp
buk9e2r8-60e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E2R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.10. Size:213K  nxp
buk9e4r4-80e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E4R4-80EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.11. Size:211K  nxp
buk9e2r3-40e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E2R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.12. Size:208K  nxp
buk9e4r9-60e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E4R9-60EN-channel TrenchMOS logic level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive a

 9.13. Size:210K  nxp
buk9e3r7-60e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E3R7-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

 9.14. Size:968K  nxp
buk9e08-55b.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.15. Size:209K  nxp
buk9e6r1-100e.pdf

BUK9E1R6-30E
BUK9E1R6-30E

BUK9E6R1-100EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

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