BUK9E1R6-30E Datasheet. Specs and Replacement

Type Designator: BUK9E1R6-30E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 349 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 127 nS

Cossⓘ - Output Capacitance: 1840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: I2PAK

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BUK9E1R6-30E datasheet

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BUK9E1R6-30E

BUK9E1R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒

 7.1. Size:226K  nxp
buk9e1r9-40e.pdf pdf_icon

BUK9E1R6-30E

BUK9E1R9-40E N-channel 40 V, 1.9 m logic level MOSFET in I PAK 5 June 2013 Product data sheet 1. General description Logic level N-channel MOSFET in a I2PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche ... See More ⇒

 8.1. Size:207K  nxp
buk9e15-60e.pdf pdf_icon

BUK9E1R6-30E

BUK9E15-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒

 9.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E1R6-30E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒

Detailed specifications: BUK965R4-40E, BUK965R8-100E, BUK966R5-60E, BUK968R3-40E, BUK969R0-60E, BUK969R3-100E, BUK9775-55A, BUK9E15-60E, 7N65, BUK9E1R9-40E, BUK9E2R3-40E, BUK9E2R8-60E, BUK9E3R2-40E, BUK9E3R7-60E, BUK9E4R4-80E, BUK9E4R9-60E, BUK9E6R1-100E

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