BUK9E1R6-30E PDF and Equivalents Search

 

BUK9E1R6-30E PDF Specs and Replacement


   Type Designator: BUK9E1R6-30E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 127 nS
   Cossⓘ - Output Capacitance: 1840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: I2PAK
 

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BUK9E1R6-30E PDF Specs

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BUK9E1R6-30E

BUK9E1R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒

 7.1. Size:226K  nxp
buk9e1r9-40e.pdf pdf_icon

BUK9E1R6-30E

BUK9E1R9-40E N-channel 40 V, 1.9 m logic level MOSFET in I PAK 5 June 2013 Product data sheet 1. General description Logic level N-channel MOSFET in a I2PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche ... See More ⇒

 8.1. Size:207K  nxp
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BUK9E1R6-30E

BUK9E15-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒

 9.1. Size:358K  philips
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BUK9E1R6-30E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒

Detailed specifications: BUK965R4-40E , BUK965R8-100E , BUK966R5-60E , BUK968R3-40E , BUK969R0-60E , BUK969R3-100E , BUK9775-55A , BUK9E15-60E , 7N65 , BUK9E1R9-40E , BUK9E2R3-40E , BUK9E2R8-60E , BUK9E3R2-40E , BUK9E3R7-60E , BUK9E4R4-80E , BUK9E4R9-60E , BUK9E6R1-100E .

History: SIHP20N50E | US6M11

Keywords - BUK9E1R6-30E MOSFET specs

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