BUK9Y113-100E Todos los transistores

 

BUK9Y113-100E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9Y113-100E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10.8 nS
   Cossⓘ - Capacitancia de salida: 69 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: LFPAK56 POWER-SO8
     - Selección de transistores por parámetros

 

BUK9Y113-100E Datasheet (PDF)

 ..1. Size:299K  nxp
 buk9y113-100e.pdf pdf_icon

BUK9Y113-100E

BUK9Y113-100EN-channel 100 V, 113 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti

 7.1. Size:89K  philips
 buk9y11-30b.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible1.3

 7.2. Size:315K  nxp
 buk9y11-80e.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-80EN-channel 80 V, 11 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 7.3. Size:637K  nxp
 buk9y11-30b.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BL33N25-P | PMPB12UNEA | CTM06N60 | QS6U24 | CSD87335Q3D | 2N6904 | SSF2701

 

 
Back to Top

 


 
.