BUK9Y113-100E Todos los transistores

 

BUK9Y113-100E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y113-100E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10.8 nS

Cossⓘ - Capacitancia de salida: 69 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: LFPAK56 POWER-SO8

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BUK9Y113-100E datasheet

 ..1. Size:299K  nxp
 buk9y113-100e.pdf pdf_icon

BUK9Y113-100E

BUK9Y113-100E N-channel 100 V, 113 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti

 7.1. Size:89K  philips
 buk9y11-30b.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3

 7.2. Size:315K  nxp
 buk9y11-80e.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-80E N-channel 80 V, 11 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a

 7.3. Size:637K  nxp
 buk9y11-30b.pdf pdf_icon

BUK9Y113-100E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible

MOSTRAR MÁS

Otros transistores... BUK9K35-60E , BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , IRF530 , BUK9Y11-80E , BUK9Y12-100E , BUK9Y12-40E , BUK9Y14-80E , BUK9Y15-100E , BUK9Y153-100E , BUK9Y15-60E , BUK9Y19-100E .

 

 

 

 

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