BUK9Y113-100E MOSFET Datasheet: N-Ch, 100V, 12A. Full specification with pinout and replacement list

BUK9Y113-100E Specs and Replacement

Type Designator: BUK9Y113-100E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: LFPAK56 POWER-SO8

BUK9Y113-100E substitution

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BUK9Y113-100E datasheet

..1. Size:299K nxp
buk9y113-100e.pdf pdf_icon

BUK9Y113-100E N-channel 100 V, 113 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti... See More ⇒

7.1. Size:89K philips
buk9y11-30b.pdf pdf_icon

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒

7.2. Size:315K nxp
buk9y11-80e.pdf pdf_icon

BUK9Y11-80E N-channel 80 V, 11 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒

7.3. Size:637K nxp
buk9y11-30b.pdf pdf_icon

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible... See More ⇒

Detailed specifications: BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E, BUK9K6R8-40E, BUK9K89-100E, BUK9K8R7-40E, BUK9Y107-80E, IRF530, BUK9Y11-80E, BUK9Y12-100E, BUK9Y12-40E, BUK9Y14-80E, BUK9Y15-100E, BUK9Y153-100E, BUK9Y15-60E, BUK9Y19-100E