BUK9Y113-100E. Аналоги и основные параметры
Наименование производителя: BUK9Y113-100E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10.8 ns
Cossⓘ - Выходная емкость: 69 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK9Y113-100E
- подборⓘ MOSFET транзистора по параметрам
BUK9Y113-100E даташит
buk9y113-100e.pdf
BUK9Y113-100E N-channel 100 V, 113 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti
buk9y11-30b.pdf
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3
buk9y11-80e.pdf
BUK9Y11-80E N-channel 80 V, 11 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a
buk9y11-30b.pdf
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible
Другие MOSFET... BUK9K35-60E , BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , IRF530 , BUK9Y11-80E , BUK9Y12-100E , BUK9Y12-40E , BUK9Y14-80E , BUK9Y15-100E , BUK9Y153-100E , BUK9Y15-60E , BUK9Y19-100E .
History: BUK9Y107-80E
History: BUK9Y107-80E
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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