BUZ101S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ101S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO-220AB

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BUZ101S Datasheet (PDF)

..1. Size:68K siemens
buz101s spp22n05.pdf

BUZ 101 SPreliminary dataSPP22N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 S 55 V 22 A 0.06 TO-220 AB Q67040-S4013-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 22TC

..2. Size:131K infineon
buz101s.pdf

BUZ 101SSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 22 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube

0.1. Size:88K siemens
buz101sl spp20n05l.pdf

BUZ 101 SLSPP20N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 SL 55 V 20 A 0.07 TO-220 AB Q67040-S4012-A2Maximum RatingsParameter Symbol Values UnitContinuous drain cur

0.2. Size:108K infineon
buz101sl.pdf

BUZ 101SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.04RDS(on) Enhancement modeContinuous drain current 20 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101SL P-TO220-3-1 Q

8.1. Size:121K siemens
buz101l.pdf

BUZ 101LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 101L 50 V 29 A 0.06 TO-220 AB C67078-S1355-A2Maximum RatingsParameter Symbol Values UnitCont

8.2. Size:117K siemens
buz101.pdf

BUZ 101SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 50 V 29 A 0.06 TO-220 AB C67078-S1350-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

8.3. Size:288K inchange semiconductor
buz101.pdf

isc N-Channel MOSFET Transistor BUZ101FEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 0.06(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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