Справочник MOSFET. BUZ101S

 

BUZ101S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ101S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для BUZ101S

 

 

BUZ101S Datasheet (PDF)

 ..1. Size:68K  siemens
buz101s spp22n05.pdf

BUZ101S
BUZ101S

BUZ 101 SPreliminary dataSPP22N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 S 55 V 22 A 0.06 TO-220 AB Q67040-S4013-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 22TC

 ..2. Size:131K  infineon
buz101s.pdf

BUZ101S
BUZ101S

BUZ 101SSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 22 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube

 0.1. Size:88K  siemens
buz101sl spp20n05l.pdf

BUZ101S
BUZ101S

BUZ 101 SLSPP20N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 SL 55 V 20 A 0.07 TO-220 AB Q67040-S4012-A2Maximum RatingsParameter Symbol Values UnitContinuous drain cur

 0.2. Size:108K  infineon
buz101sl.pdf

BUZ101S
BUZ101S

BUZ 101SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.04RDS(on) Enhancement modeContinuous drain current 20 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101SL P-TO220-3-1 Q

 8.1. Size:121K  siemens
buz101l.pdf

BUZ101S
BUZ101S

BUZ 101LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 101L 50 V 29 A 0.06 TO-220 AB C67078-S1355-A2Maximum RatingsParameter Symbol Values UnitCont

 8.2. Size:117K  siemens
buz101.pdf

BUZ101S
BUZ101S

BUZ 101SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 50 V 29 A 0.06 TO-220 AB C67078-S1350-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

 8.3. Size:288K  inchange semiconductor
buz101.pdf

BUZ101S
BUZ101S

isc N-Channel MOSFET Transistor BUZ101FEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 0.06(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ME7648S | MKE11R600DCGFC

 

 
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