BUZ101S
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ101S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
TO-220AB
BUZ101S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ101S
Datasheet (PDF)
..1. Size:68K siemens
buz101s spp22n05.pdf 
BUZ 101 SPreliminary dataSPP22N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 S 55 V 22 A 0.06 TO-220 AB Q67040-S4013-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 22TC
..2. Size:131K infineon
buz101s.pdf
BUZ 101SSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 22 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube
0.1. Size:88K siemens
buz101sl spp20n05l.pdf
BUZ 101 SLSPP20N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 SL 55 V 20 A 0.07 TO-220 AB Q67040-S4012-A2Maximum RatingsParameter Symbol Values UnitContinuous drain cur
0.2. Size:108K infineon
buz101sl.pdf
BUZ 101SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.04RDS(on) Enhancement modeContinuous drain current 20 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101SL P-TO220-3-1 Q
8.1. Size:121K siemens
buz101l.pdf
BUZ 101LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 101L 50 V 29 A 0.06 TO-220 AB C67078-S1355-A2Maximum RatingsParameter Symbol Values UnitCont
8.2. Size:117K siemens
buz101.pdf
BUZ 101SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 50 V 29 A 0.06 TO-220 AB C67078-S1350-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current
8.3. Size:288K inchange semiconductor
buz101.pdf
isc N-Channel MOSFET Transistor BUZ101FEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 0.06(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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