BUZ101S PDF and Equivalents Search

 

BUZ101S Specs and Replacement


   Type Designator: BUZ101S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-220AB
 

 BUZ101S substitution

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BUZ101S datasheet

 ..1. Size:68K  siemens
buz101s spp22n05.pdf pdf_icon

BUZ101S

BUZ 101 S Preliminary data SPP22N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 S 55 V 22 A 0.06 TO-220 AB Q67040-S4013-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 22 TC... See More ⇒

 ..2. Size:131K  infineon
buz101s.pdf pdf_icon

BUZ101S

BUZ 101S SIPMOS PowerTransistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.05 RDS(on) Enhancement mode Continuous drain current 22 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube... See More ⇒

 0.1. Size:88K  siemens
buz101sl spp20n05l.pdf pdf_icon

BUZ101S

BUZ 101 SL SPP20N05L SIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 SL 55 V 20 A 0.07 TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain cur... See More ⇒

 0.2. Size:108K  infineon
buz101sl.pdf pdf_icon

BUZ101S

BUZ 101SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.04 RDS(on) Enhancement mode Continuous drain current 20 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ101SL P-TO220-3-1 Q... See More ⇒

Detailed specifications: BUK9Y8R5-80E , BUK9Y8R7-60E , BUZ100 , BUZ100L , BUZ100S , BUZ100SL-4 , BUZ101 , BUZ101L , IRF830 , BUZ101SL , BUZ102 , BUZ102AL , BUZ102S , BUZ102SL , BUZ102SL-4 , BUZ103 , BUZ103S-4 .

History: APTM120DA30CT1G | JMSL1020AGDQ | AGM01P15D | AGM15N10AP | IPD90N04S3-H4 | P0660EI | 2SJ188

Keywords - BUZ101S MOSFET specs

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