BUZ102S Todos los transistores

 

BUZ102S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ102S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 52 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO-220AB

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BUZ102S Datasheet (PDF)

 ..1. Size:86K  siemens
buz102s.pdf

BUZ102S
BUZ102S

BUZ 102 SSPP52N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 102 S 55 V 52 A 0.023 TO-220 AB Q67040-S4011-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 ..2. Size:125K  infineon
buz102s.pdf

BUZ102S
BUZ102S

BUZ 102SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.018RDS(on) Enhancement modeContinuous drain current 52 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ102S P-TO220-3-1 Q67040-S4011-A2 Tu

 0.1. Size:95K  siemens
buz102sl-4.pdf

BUZ102S
BUZ102S

BUZ 102SL-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 102SL-4 55 V 6.2 A 0.033 P-DSO-28 C67078-S. . . .- . . Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 6.2Pulsed drain current

 0.2. Size:172K  infineon
buz102sl.pdf

BUZ102S
BUZ102S

www.tvsat.com.pl

 8.1. Size:116K  siemens
buz102al.pdf

BUZ102S
BUZ102S

BUZ 102ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 102AL 50 V 42 A 0.028 TO-220 AB C67078-S1356-A2Maximum RatingsParameter Symbol Values UnitC

 8.2. Size:116K  siemens
buz102.pdf

BUZ102S
BUZ102S

BUZ 102SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 102 50 V 42 A 0.023 TO-220 AB C67078-S1351-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren

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