BUZ102S Todos los transistores

 

BUZ102S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ102S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 52 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 45 nC

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TO-220AB

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BUZ102S Datasheet (PDF)

1.1. buz102sl.pdf Size:172K _update_mosfet

BUZ102S
BUZ102S

www.tvsat.com.pl                  

1.2. buz102sl-4.pdf Size:95K _update_mosfet

BUZ102S
BUZ102S

BUZ 102SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 102SL-4 55 V 6.2 A 0.033 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 °C 6.2 Pulsed drain current

 1.3. buz102s.pdf Size:86K _update_mosfet

BUZ102S
BUZ102S

BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 102 S 55 V 52 A 0.023 Ω TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

1.4. buz102sl.pdf Size:121K _infineon

BUZ102S
BUZ102S

BUZ 102SL Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.015 RDS(on) ? Enhancement mode Continuous drain current 47 A ID Avalanche rated Logic Level dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ102SL P-TO220-3-1 Q67040-S4010-A2 Tube BUZ102SL E3045A P-TO263

 1.5. buz102s.pdf Size:125K _infineon

BUZ102S
BUZ102S

BUZ 102S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.018 RDS(on) ? Enhancement mode Continuous drain current 52 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ102S P-TO220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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