All MOSFET. BUZ102S Datasheet

 

BUZ102S Datasheet and Replacement


   Type Designator: BUZ102S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220AB
 

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BUZ102S Datasheet (PDF)

 ..1. Size:86K  siemens
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BUZ102S

BUZ 102 SSPP52N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 102 S 55 V 52 A 0.023 TO-220 AB Q67040-S4011-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 ..2. Size:125K  infineon
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BUZ102S

BUZ 102SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.018RDS(on) Enhancement modeContinuous drain current 52 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ102S P-TO220-3-1 Q67040-S4011-A2 Tu

 0.1. Size:95K  siemens
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BUZ102S

BUZ 102SL-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 102SL-4 55 V 6.2 A 0.033 P-DSO-28 C67078-S. . . .- . . Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 6.2Pulsed drain current

 0.2. Size:172K  infineon
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BUZ102S

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Datasheet: BUZ100S , BUZ100SL-4 , BUZ101 , BUZ101L , BUZ101S , BUZ101SL , BUZ102 , BUZ102AL , EMB04N03H , BUZ102SL , BUZ102SL-4 , BUZ103 , BUZ103S-4 , BUZ103SL , BUZ104 , BUZ104L , BUZ104S .

Keywords - BUZ102S MOSFET datasheet

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