BUZ104L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ104L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 17.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-220AB

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BUZ104L Datasheet (PDF)

..1. Size:132K siemens
buz104l.pdf

BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitCon

8.1. Size:131K siemens
buz104.pdf

BUZ 104SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren

8.2. Size:91K siemens
buz104s spp14n05.pdf

BUZ104SBUZ104SBUZ 104 SSPP14N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 S 55 V 13.5 A 0.1 TO-220 AB Q67040-S4007-A2Maximum RatingsParameter Symbol Valu

8.3. Size:129K infineon
buz104sl.pdf

BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3

8.4. Size:129K infineon
buz104s.pdf

BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 T

8.5. Size:230K inchange semiconductor
buz104.pdf

isc N-Channel Mosfet Transistor BUZ104FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOL

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History: STW57N65M5-4 | APF7619WS | FDB016N04AL7

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