BUZ104L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ104L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 14 V
Corriente continua de drenaje |Id|: 17.5 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 140 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET BUZ104L
BUZ104L Datasheet (PDF)
buz104l.pdf
BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitCon
buz104.pdf
BUZ 104SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren
buz104s spp14n05.pdf
BUZ104SBUZ104SBUZ 104 SSPP14N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 S 55 V 13.5 A 0.1 TO-220 AB Q67040-S4007-A2Maximum RatingsParameter Symbol Valu
buz104sl.pdf
BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3
buz104s.pdf
BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 T
buz104.pdf
isc N-Channel Mosfet Transistor BUZ104FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOL
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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