BUZ104L
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ104L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 14
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 17.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-220AB
BUZ104L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ104L
Datasheet (PDF)
..1. Size:132K siemens
buz104l.pdf
BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitCon
8.1. Size:131K siemens
buz104.pdf
BUZ 104SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren
8.2. Size:91K siemens
buz104s spp14n05.pdf
BUZ104SBUZ104SBUZ 104 SSPP14N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 S 55 V 13.5 A 0.1 TO-220 AB Q67040-S4007-A2Maximum RatingsParameter Symbol Valu
8.3. Size:129K infineon
buz104sl.pdf
BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3
8.4. Size:129K infineon
buz104s.pdf
BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 T
8.5. Size:230K inchange semiconductor
buz104.pdf
isc N-Channel Mosfet Transistor BUZ104FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOL
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