BUZ12A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ12A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-220AB

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BUZ12A Datasheet (PDF)

..1. Size:117K siemens
buz12a.pdf

BUZ 12 ANot for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 12 A 50 V 42 A 0.035 TO-220 AB C67078-S1331-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 44 C 42Pulsed drain current IDpulsTC = 25 C 168Avalanche curre

..2. Size:229K inchange semiconductor
buz12a.pdf

isc N-Channel Mosfet Transistor BUZ12AFEATURESStatic Drain-Source On-Resistance: R = 0.035(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re

9.1. Size:109K comset
buz12.pdf

BUZ12 SIPMOS POWER TRANSISTORS FEATURE Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVDS Drain-Source Voltage 50 VID Continuous Drain Current TC= 65C 42 IDpuls Pulsed Drain Current TC= 25C 168 A IAR Avalanche Current, Limited by Tjmax 42EAR Avalanche Energy, Peri

9.2. Size:229K inchange semiconductor
buz12.pdf

isc N-Channel Mosfet Transistor BUZ12FEATURESStatic Drain-Source On-Resistance: R = 0.028(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rel

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