All MOSFET. BUZ12A Datasheet

 

BUZ12A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ12A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO-220AB

BUZ12A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ12A Datasheet (PDF)

1.1. buz12a.pdf Size:117K _update_mosfet

BUZ12A BUZ12A

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 Ω TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 44 °C 42 Pulsed drain current IDpuls TC = 25 °C 168 Avalanche curre

5.1. buz12.pdf Size:109K _update_mosfet

BUZ12A BUZ12A

BUZ12 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 50 V ID Continuous Drain Current TC= 65°C 42 IDpuls Pulsed Drain Current TC= 25°C 168 A IAR Avalanche Current, Limited by Tjmax 42 EAR Avalanche Energy, Peri

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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