BUZ12A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ12A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 85 nS
Drain-Source Capacitance (Cd): 800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO-220AB
BUZ12A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ12A Datasheet (PDF)
1.1. buz12a.pdf 
Size:117K _update_mosfet
BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 Ω TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 44 °C 42 Pulsed drain current IDpuls TC = 25 °C 168 Avalanche curre
5.1. buz12.pdf Size:109K _update_mosfet
BUZ12 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 50 V ID Continuous Drain Current TC= 65°C 42 IDpuls Pulsed Drain Current TC= 25°C 168 A IAR Avalanche Current, Limited by Tjmax 42 EAR Avalanche Energy, Peri
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