BUZ307 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 307SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 307 800 V 3 A 3 TO-218 AA C67078-S3100-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 3Pulsed drain current IDpulsTC = 25 C 12Avalanche current,limited by Tjmax IAR 3A

SIPMOS Power Transistors BUZ 307BUZ 308 N channel Enhancement mode1)Type VDS ID RDS (on) Package Ordering CodeBUZ 307 800 V 3.0 A 3.0 TO-218 AA C67078-A3100-A2BUZ 308 800 V 2.6 A 4.0 TO-218 AA C67078-A3109-A2Maximum RatingsParameter Symbol BUZ Unit307 308Continuous drain current, TC =50C ID 3.0 2.6 APulsed drain current, TC =25C ID puls 10Drain-source vol

isc N-Channel Mosfet Transistor BUZ307FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

BUZ 308SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 308 800 V 2.6 A 4 TO-218 AA C67078-S3109-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 50 C 2.6Pulsed drain current IDpulsTC = 25 C 10Avalanche current,limited by Tjmax IAR

BUZ 305SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 305 800 V 7.5 A 1 TO-218 AA C67078-S3134-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 31 C 7.5Pulsed drain current IDpulsTC = 25 C 30Avalanche current,limited by Tjmax IAR

BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2--21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Aval

BUZ30A H3045A . Halogen-free according to IEC61249-2-21Pb-free H3045A PG-TO263-3 Yes Rev. 2.22010-07-02BUZ30A H3045A2010-07-02Rev. 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A101010.10.01Rev 2.2 2010-07-02BUZ30A H3045A2010-07-02Rev 2.2

BUZ 30A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR 21Avalanche

isc N-Channel Mosfet Transistor BUZ308FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

isc N-Channel Mosfet Transistor BUZ305FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

isc N-Channel MOSFET Transistor BUZ30AHIBUZ30AHFEATURESStatic drain-source on-resistance:RDS(on) 130mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Isc N-Channel MOSFET Transistor BUZ30AH3045AFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel Mosfet Transistor BUZ30AFEATURESStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)High current capability150 operating temperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC converters