BUZ307 - описание и поиск аналогов

 ..1. Size:212K  siemens
 buz307.pdf 

BUZ 307 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 307 800 V 3 A 3 TO-218 AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 35 C 3 Pulsed drain current IDpuls TC = 25 C 12 Avalanche current,limited by Tjmax IAR 3 A

 ..2. Size:496K  siemens
 buz307 buz308.pdf 

SIPMOS Power Transistors BUZ 307 BUZ 308 N channel Enhancement mode 1) Type VDS ID RDS (on) Package Ordering Code BUZ 307 800 V 3.0 A 3.0 TO-218 AA C67078-A3100-A2 BUZ 308 800 V 2.6 A 4.0 TO-218 AA C67078-A3109-A2 Maximum Ratings Parameter Symbol BUZ Unit 307 308 Continuous drain current, TC =50 C ID 3.0 2.6 A Pulsed drain current, TC =25 C ID puls 10 Drain-source vol

 ..3. Size:232K  inchange semiconductor
 buz307.pdf 

isc N-Channel Mosfet Transistor BUZ307 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

 9.1. Size:242K  siemens
 buz308.pdf 

BUZ 308 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 308 800 V 2.6 A 4 TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 50 C 2.6 Pulsed drain current IDpuls TC = 25 C 10 Avalanche current,limited by Tjmax IAR

 9.2. Size:88K  siemens
 buz305.pdf 

BUZ 305 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 305 800 V 7.5 A 1 TO-218 AA C67078-S3134-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 31 C 7.5 Pulsed drain current IDpuls TC = 25 C 30 Avalanche current,limited by Tjmax IAR

 9.3. Size:1428K  infineon
 buz30ah.pdf 

BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 C 21 Pulsed drain current IDpuls TC = 25 C 84 Aval

 9.4. Size:1654K  infineon
 buz30ah3045a.pdf 

BUZ30A H3045A . Halogen-free according to IEC61249-2-21 Pb-free H3045A PG-TO263-3 Yes Rev. 2.2 2010-07-02 BUZ30A H3045A 2010-07-02 Rev. 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 10 10 1 0.1 0.01 Rev 2.2 2010-07-02 BUZ30A H3045A 2010-07-02 Rev 2.2

 9.5. Size:509K  infineon
 buz30a.pdf 

BUZ 30A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 30A 200 V 21 A 0.13 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,limited by Tjmax IAR 21 Avalanche

 9.6. Size:232K  inchange semiconductor
 buz308.pdf 

isc N-Channel Mosfet Transistor BUZ308 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

 9.7. Size:231K  inchange semiconductor
 buz305.pdf 

isc N-Channel Mosfet Transistor BUZ305 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

 9.8. Size:245K  inchange semiconductor
 buz30ah.pdf 

isc N-Channel MOSFET Transistor BUZ30AH IBUZ30AH FEATURES Static drain-source on-resistance RDS(on) 130m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current,high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.9. Size:228K  inchange semiconductor
 buz30ah3045a.pdf 

Isc N-Channel MOSFET Transistor BUZ30AH3045A FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.10. Size:229K  inchange semiconductor
 buz30a.pdf 

isc N-Channel Mosfet Transistor BUZ30A FEATURES Static Drain-Source On-Resistance R = 0.13 (Max) DS(on) High current capability 150 operating temperature High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current , high speed switching Solenoid and relay drivers DC-DC & DC-AC converters