BUZ307 PDF and Equivalents Search

 

BUZ307 PDF Specs and Replacement


   Type Designator: BUZ307
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-218AA
 

 BUZ307 substitution

   - MOSFET ⓘ Cross-Reference Search

 

BUZ307 PDF Specs

 ..1. Size:212K  siemens
buz307.pdf pdf_icon

BUZ307

BUZ 307 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 307 800 V 3 A 3 TO-218 AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 35 C 3 Pulsed drain current IDpuls TC = 25 C 12 Avalanche current,limited by Tjmax IAR 3 A... See More ⇒

 ..2. Size:496K  siemens
buz307 buz308.pdf pdf_icon

BUZ307

SIPMOS Power Transistors BUZ 307 BUZ 308 N channel Enhancement mode 1) Type VDS ID RDS (on) Package Ordering Code BUZ 307 800 V 3.0 A 3.0 TO-218 AA C67078-A3100-A2 BUZ 308 800 V 2.6 A 4.0 TO-218 AA C67078-A3109-A2 Maximum Ratings Parameter Symbol BUZ Unit 307 308 Continuous drain current, TC =50 C ID 3.0 2.6 A Pulsed drain current, TC =25 C ID puls 10 Drain-source vol... See More ⇒

 ..3. Size:232K  inchange semiconductor
buz307.pdf pdf_icon

BUZ307

isc N-Channel Mosfet Transistor BUZ307 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc... See More ⇒

 9.1. Size:242K  siemens
buz308.pdf pdf_icon

BUZ307

BUZ 308 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 308 800 V 2.6 A 4 TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 50 C 2.6 Pulsed drain current IDpuls TC = 25 C 10 Avalanche current,limited by Tjmax IAR ... See More ⇒

Detailed specifications: BUZ21L , BUZ22 , BUZ220 , BUZ221 , BUZ231 , BUZ255 , BUZ272 , BUZ305 , IRFB4115 , BUZ308 , BUZ30A , BUZ31 , BUZ310 , BUZ31L , BUZ323 , BUZ325 , BUZ332A .

History: JMSH1101PE

Keywords - BUZ307 MOSFET specs

 BUZ307 cross reference
 BUZ307 equivalent finder
 BUZ307 pdf lookup
 BUZ307 substitution
 BUZ307 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.