BUZ350 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ350
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 70 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Encapsulados: TO-218AA
Búsqueda de reemplazo de BUZ350 MOSFET
- Selecciónⓘ de transistores por parámetros
BUZ350 datasheet
..1. Size:106K infineon
buz350.pdf 
BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 C 22 Pulsed drain current IDpuls TC = 25 C 88 Avalanche current,limited by Tjmax I
9.4. Size:208K siemens
buz355.pdf
BUZ 355 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 355 800 V 6 A 1.5 TO-218 AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 5.
9.5. Size:207K siemens
buz356.pdf
BUZ 356 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 356 800 V 5.3 A 2 TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 5.3 Pulsed drain current IDpuls TC = 25 C 21 Avalanche current,limited by Tjmax IAR
9.6. Size:68K siemens
buz358.pdf
BUZ 358 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax I
9.8. Size:489K siemens
buz355 buz356.pdf
SIPMOS Power Transistors BUZ 355 BUZ 356 N channel Enhancement mode 1) Type VDS ID TC RDS (on) Package Ordering Code BUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2 BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2 Maximum Ratings Parameter Symbol BUZ Unit 355 356 Continuous drain current ID 6.0 5.3 A Pulsed drain current, TC = 25 C ID puls 21 Drain so
9.9. Size:474K siemens
buz357 buz358.pdf
SIPMOS Power Transistors BUZ 357 BUZ 358 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2 BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol BUZ Unit 357 358 Continuous drain current, TC = 25 C ID 5.1 4.5 A Pulsed drain current, TC = 25 C ID p
9.10. Size:223K inchange semiconductor
buz35.pdf
isc N-Channel Mosfet Transistor BUZ35 FEATURES Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for
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