BUZ350 Specs and Replacement

Type Designator: BUZ350

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-218AA

BUZ350 substitution

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BUZ350 datasheet

 ..1. Size:106K  infineon
buz350.pdf pdf_icon

BUZ350

BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 C 22 Pulsed drain current IDpuls TC = 25 C 88 Avalanche current,limited by Tjmax I... See More ⇒

 9.1. Size:280K  st
buz354.pdf pdf_icon

BUZ350

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 9.2. Size:264K  st
buz353.pdf pdf_icon

BUZ350

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 9.3. Size:182K  siemens
buz351.pdf pdf_icon

BUZ350

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Detailed specifications: BUZ339, BUZ34, BUZ341, BUZ342, BUZ345, BUZ346S2, BUZ348, BUZ349, 4435, BUZ351, BUZ355, BUZ356, BUZ357, BUZ358, BUZ360, BUZ37, BUZ381

Keywords - BUZ350 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.