CHM02N6GPAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM02N6GPAGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
CHM02N6GPAGP Datasheet (PDF)
chm02n6gpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High pow
chm02n6angp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 1.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160
chm02n6pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
chm02n7pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N7PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP03N90I | IRF624A | FQPF2NA90 | IXFT14N80P | FDA24N50 | DMC2041UFDB | SMP40N10
History: AP03N90I | IRF624A | FQPF2NA90 | IXFT14N80P | FDA24N50 | DMC2041UFDB | SMP40N10



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