CHM02N6GPAGP
MOSFET. Datasheet pdf. Equivalent
Type Designator: CHM02N6GPAGP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.7
nC
trⓘ - Rise Time: 11
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5
Ohm
Package:
DPAK
CHM02N6GPAGP
Datasheet (PDF)
..1. Size:86K chenmko
chm02n6gpagp.pdf 
CHENMKO ENTERPRISE CO.,LTDCHM02N6GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High pow
7.1. Size:107K chenmko
chm02n6angp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM02N6ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 1.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160
7.2. Size:97K chenmko
chm02n6pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM02N6PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
8.1. Size:97K chenmko
chm02n7pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM02N7PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
8.2. Size:107K chenmko
chm02n7ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM02N7NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(
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