CHM0410JGP Todos los transistores

 

CHM0410JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHM0410JGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 12 nC

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 0.12 Ohm

Empaquetado / Estuche: SO-8

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CHM0410JGP Datasheet (PDF)

1.1. chm0410jgp.pdf Size:73K _update_mosfet

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM0410JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 3.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

1.2. chm0410jgp.pdf Size:73K _chenmko

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM0410JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 3.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 5.1. chm04n10zpt.pdf Size:106K _update-mosfet

CHM0410JGP
CHM0410JGP

SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Drain Gate Static Max. Gate Zero to to Drain Drain to Source Threshold Gate Voltage Equivalent Source Source Current On Outline Voltage Drain Current TYPE Marking Circuit Voltage Voltage Resistance No. Diagram VDSS VGSS ID(DC) RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V V V mA ohmS mA / V V uA V

5.2. chm04n6ngp.pdf Size:107K _update_mosfet

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM04N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 5.3. chm04n10zpt.pdf Size:106K _china

CHM0410JGP
CHM0410JGP

SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Drain Gate Static Max. Gate Zero to to Drain Drain to Source Threshold Gate Voltage Equivalent Source Source Current On Outline Voltage Drain Current TYPE Marking Circuit Voltage Voltage Resistance No. Diagram VDSS VGSS ID(DC) RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V V V mA ohmS mA / V V uA V

5.4. chm04n6ngp.pdf Size:107K _chenmko

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM04N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

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