CHM0410JGP
MOSFET. Datasheet pdf. Equivalent
Type Designator: CHM0410JGP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package:
SO-8
CHM0410JGP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CHM0410JGP
Datasheet (PDF)
..1. Size:73K chenmko
chm0410jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM0410JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 100 Volts CURRENT 3.4 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
9.1. Size:106K china
chm04n10zpt.pdf
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONSPLASTIC MATERIAL USED CARRIES UL 94V-0Drain Gate StaticMax. Gate Zeroto to Drain Drain to SourceThreshold Gate VoltageEquivalentSource Source Current OnOutlineVoltage Drain CurrentTYPE Marking CircuitVoltage Voltage ResistanceNo.DiagramVDSS VGSS ID(DC) RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0VV V mA ohmS mA / V V uA V
9.2. Size:107K chenmko
chm04n6ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM04N6NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.
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