CHM634PAGP Todos los transistores

 

CHM634PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM634PAGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 11 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-252
 

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CHM634PAGP Datasheet (PDF)

 ..1. Size:70K  chenmko
 chm634pagp.pdf pdf_icon

CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM634PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.1. Size:69K  chenmko
 chm630pagp.pdf pdf_icon

CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.2. Size:165K  chenmko
 chm6338jgp.pdf pdf_icon

CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

 9.3. Size:199K  chenmko
 chm63a3pagp.pdf pdf_icon

CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

MOSTRAR MÁS

Otros transistores... CHM61A3PAGP , CHM62A2PAGP , CHM62A3PAGP , CHM6308SGP , CHM630PAGP , CHM6335SGP , CHM6336JGP , CHM6338JGP , IRFZ46N , CHM63A3PAGP , CHM640NGP , CHM6426JGP , CHM6426PAGP , CHM6426XGP , CHM6428JGP , CHM6503GP , CHM6561QGP .

History: SI4090DY | HM603K | IRFS635 | MTN7000A3 | P0470ATF | FQB2N30TM

 

 
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