CHM634PAGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM634PAGP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TO-252
Аналог (замена) для CHM634PAGP
CHM634PAGP Datasheet (PDF)
chm634pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM634PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm630pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6338jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an
chm63a3pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Другие MOSFET... CHM61A3PAGP , CHM62A2PAGP , CHM62A3PAGP , CHM6308SGP , CHM630PAGP , CHM6335SGP , CHM6336JGP , CHM6338JGP , IRFZ46N , CHM63A3PAGP , CHM640NGP , CHM6426JGP , CHM6426PAGP , CHM6426XGP , CHM6428JGP , CHM6503GP , CHM6561QGP .



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