Справочник MOSFET. CHM634PAGP

 

CHM634PAGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM634PAGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 11 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CHM634PAGP

 

 

CHM634PAGP Datasheet (PDF)

 ..1. Size:70K  chenmko
 chm634pagp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM634PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.1. Size:69K  chenmko
 chm630pagp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.2. Size:165K  chenmko
 chm6338jgp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

 9.3. Size:199K  chenmko
 chm63a3pagp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.4. Size:48K  chenmko
 chm6336jgp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6336JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.5. Size:188K  chenmko
 chm6335sgp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6335SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 20 Volts CURRENT 1.2 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-88/SOT-363* Load Switch* DSC(1)(S1) (D1)(6)* LCD Display inverter (G1) 0.651.2~1.4 2.0~2.2FEATURE(G2)0.65* Small surface mounting

 9.6. Size:227K  chenmko
 chm6308sgp.pdf

CHM634PAGP CHM634PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6308SGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 1.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-88/SOT-363* Load Switch* DSC. * LCD Display inverter (6)(1)FEATURE0.651.2~1.4 2.0~2.2* Small surface mounting

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