CHM634PAGP MOSFET. Datasheet pdf. Equivalent
Type Designator: CHM634PAGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 11 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-252
CHM634PAGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CHM634PAGP Datasheet (PDF)
chm634pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM634PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm630pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6338jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an
chm63a3pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6336jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6336JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm6335sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6335SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 20 Volts CURRENT 1.2 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-88/SOT-363* Load Switch* DSC(1)(S1) (D1)(6)* LCD Display inverter (G1) 0.651.2~1.4 2.0~2.2FEATURE(G2)0.65* Small surface mounting
chm6308sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6308SGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 1.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-88/SOT-363* Load Switch* DSC. * LCD Display inverter (6)(1)FEATURE0.651.2~1.4 2.0~2.2* Small surface mounting
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF4N90
History: AOTF4N90
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