NDP508A Todos los transistores

 

NDP508A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDP508A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO220
 

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NDP508A datasheet

 9.1. Size:358K  fairchild semi
 ndp5060l ndb5060l.pdf pdf_icon

NDP508A

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. This Critical DC electrical p

 9.2. Size:468K  onsemi
 ndp5060l ndb5060l.pdf pdf_icon

NDP508A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , NDP410A , NDP5060 , NDP5060L , K3569 , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L , NDP6030PL , NDP603AL , NDP6050 .

 

 
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