Аналоги NDP508A. Основные параметры
Наименование производителя: NDP508A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO220
Аналог (замена) для NDP508A
NDP508A даташит
ndp5060l ndb5060l.pdf
October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. This Critical DC electrical p
ndp5060l ndb5060l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , NDP410A , NDP5060 , NDP5060L , K3569 , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L , NDP6030PL , NDP603AL , NDP6050 .
Список транзисторов
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