All MOSFET. NDP508A Datasheet

 

NDP508A Datasheet and Replacement


   Type Designator: NDP508A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220
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NDP508A Datasheet (PDF)

 9.1. Size:358K  fairchild semi
ndp5060l ndb5060l.pdf pdf_icon

NDP508A

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. ThisCritical DC electrical p

 9.2. Size:468K  onsemi
ndp5060l ndb5060l.pdf pdf_icon

NDP508A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , NDP410A , NDP5060 , NDP5060L , 2SK3568 , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L , NDP6030PL , NDP603AL , NDP6050 .

History: SWI30N06 | HN1K04FU | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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