CP650 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CP650
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: TO5
Búsqueda de reemplazo de CP650 MOSFET
- Selecciónⓘ de transistores por parámetros
CP650 datasheet
fcp650n80z.pdf
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fcp650n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp650n80z.pdf
isc N-Channel MOSFET Transistor FCP650N80Z FEATURES Static drain-source on-resistance RDS(on) 650m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI
Otros transistores... CMUDM7005, CMUDM7590, CMUDM8001, CMUDM8004, CMUDM8005, CMXDM7002A, CP640, CP643, AO3401, CP651, CP664, CP665, CP666, CS04CN10, CS100N03B4, CS1010, CS1010EA8
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