CP650 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CP650
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
Tjⓘ - Максимальная температура канала: 200 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
Тип корпуса: TO5
CP650 Datasheet (PDF)
fcp650n80z.pdf
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fcp650n80z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp650n80z.pdf
isc N-Channel MOSFET Transistor FCP650N80ZFEATURESStatic drain-source on-resistance:RDS(on) 650mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATI
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918