CP650
MOSFET. Datasheet pdf. Equivalent
Type Designator: CP650
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 200
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
TO5
CP650
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CP650
Datasheet (PDF)
0.1. Size:650K fairchild semi
fcp650n80z.pdf
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fcp650n80z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.3. Size:281K inchange semiconductor
fcp650n80z.pdf
isc N-Channel MOSFET Transistor FCP650N80ZFEATURESStatic drain-source on-resistance:RDS(on) 650mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATI
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