CS13N50FA9H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS13N50FA9H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 27 nS
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia entre drenaje y fuente RDS(on): 0.45 Ohm
Paquete / Cubierta: TO-220F
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CS13N50FA9H Datasheet (PDF)
cs13n50fa9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
cs13n50fa9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf
N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
cs13n50f a9d.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs13n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs13n50f a9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
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