CS13N50FA9H MOSFET. Datasheet pdf. Equivalent

   Type Designator: CS13N50FA9H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 60 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 45 nC
   Rise Time (tr): 27 nS
   Drain-Source Capacitance (Cd): 210 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
   Package: TO-220F

CS13N50FA9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS13N50FA9H Datasheet (PDF)

..1. Size:226K wuxi china
cs13n50fa9h.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

4.1. Size:268K wuxi china
cs13n50fa9r.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

6.1. Size:1016K 1
jcs13n50ft.pdf

N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

6.2. Size:1655K jilin sino
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf

N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

6.3. Size:1016K jilin sino
jcs13n50ft.pdf

6.4. Size:486K crhj
cs13n50f a9d.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

6.5. Size:268K crhj
cs13n50f a9r.pdf