CS13N50FA9H MOSFET Datasheet: N-Ch, 500V, 13A. Full specification with pinout and replacement list

CS13N50FA9H Specs and Replacement

Type Designator: CS13N50FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 210 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220F

CS13N50FA9H substitution

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CS13N50FA9H datasheet

..1. Size:226K wuxi china
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Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

4.1. Size:268K wuxi china
cs13n50fa9r.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

6.1. Size:1016K 1
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N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max @Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR... See More ⇒

6.2. Size:1655K jilin sino
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf pdf_icon