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CS150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS150

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 38 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: TO-257

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CS150 Datasheet (PDF)

1.1. cs150n03 a8.pdf Size:390K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.2. cs150n04 a8.pdf Size:169K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 1.3. cs150.pdf Size:125K _china

CS150

CS150 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 38 A 极 ID (VGS=10V,TC=100℃) 24 A 限 IDM 152 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.83 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 Ω RDS on

1.4. cs150n04a8.pdf Size:200K _wuxi_china

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 1.5. cs150n03a8.pdf Size:1281K _wuxi_china

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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