All MOSFET. CS150 Datasheet

 

CS150 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS150

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO-257

CS150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS150 Datasheet (PDF)

1.1. cs150n04a8.pdf Size:200K _update_mosfet

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

1.2. cs150.pdf Size:125K _update_mosfet

CS150

CS150 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 38 A 极 ID (VGS=10V,TC=100℃) 24 A 限 IDM 152 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.83 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 Ω RDS on

 1.3. cs150n03a8.pdf Size:1281K _update_mosfet

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.4. cs150n03 a8.pdf Size:390K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 1.5. cs150n04 a8.pdf Size:169K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

1.6. cs150.pdf Size:125K _china

CS150

CS150 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 38 A 极 ID (VGS=10V,TC=100℃) 24 A 限 IDM 152 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.83 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 Ω RDS on

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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