CS150 Datasheet. Specs and Replacement
Type Designator: CS150 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-257
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CS150 datasheet
0.2. Size:1071K blue-rocket-elect
brcs150n12sra.pdf 
BRCS150N12SRA Rev.A Feb.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d... See More ⇒
0.3. Size:1720K blue-rocket-elect
brcs150n10sbd.pdf
BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS D R DSON@10V 15m (Type.14.8m ) R DSON@4.5V 25m (Type.20.4m ) HF Product. / Applications PFC ... See More ⇒
0.4. Size:1213K blue-rocket-elect
brcs150n10sra.pdf
BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d... See More ⇒
0.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf
BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN3 3-8L Complementary Enhancement MOSFET in a PDFN3 3-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)... See More ⇒
0.6. Size:1521K blue-rocket-elect
brcs150p02mc.pdf
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DS I = -7.0A D R DS(ON)@-4.5V 17m (Type.15m ) HF Product. / Applications Power Management in ... See More ⇒
0.7. Size:1040K blue-rocket-elect
brcs150n10sdp.pdf
BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/... See More ⇒
0.9. Size:1031K blue-rocket-elect
brcs150n10szc.pdf
BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H... See More ⇒
0.10. Size:3156K blue-rocket-elect
brcs150c016yn.pdf
BRCS150C016YN Rev.A Jul.-2023 DATA SHEET / Descriptions DFN2 2C-6L Complementary Enhancement MOSFET in a DFN2 2C-6L Plastic Package. / Features N-channel P-channel V =16V V =-16V DS(V) DS(V) I =8.4A I =-6.3A D D R DS(ON)@-4.5V 25m (Typ.21mR) DS(ON)@4.5V 15m (Typ.13mR) R R DS(ON)@-2.5V 35m (Typ.28mR)... See More ⇒
0.11. Size:1183K blue-rocket-elect
brcs150n12szc.pdf
BRCS150N12SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H... See More ⇒
0.13. Size:169K crhj
cs150n04 a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒
0.14. Size:390K crhj
cs150n03 a8.pdf
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
0.15. Size:392K wuxi china
cs150n03a8.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b... See More ⇒
0.16. Size:200K wuxi china
cs150n04a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒
Detailed specifications: CS12N65A8H, CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, IRF730, CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H
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