Справочник MOSFET. CS150

 

CS150 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS150

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 38 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm

Тип корпуса: TO-257

Аналог (замена) для CS150

 

 

CS150 Datasheet (PDF)

1.1. cs150n03 a8.pdf Size:390K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.2. cs150n04 a8.pdf Size:169K _crhj

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 1.3. cs150.pdf Size:125K _china

CS150

CS150 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 38 A 极 ID (VGS=10V,TC=100℃) 24 A 限 IDM 152 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.83 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 Ω RDS on

1.4. cs150n04a8.pdf Size:200K _wuxi_china

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N04 A8 General Description: VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 1.5. cs150n03a8.pdf Size:1281K _wuxi_china

CS150
CS150

Silicon N-Channel Power MOSFET R ○ CS150N03 A8 General Description: VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25℃) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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