CS16N60A8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS16N60A8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 18.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO-220AB

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CS16N60A8H datasheet

 ..1. Size:426K  wuxi china
cs16n60a8h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:426K  crhj
cs16n60 a8h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:306K  crhj
cs16n60f a9h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.3. Size:776K  convert
cs16n60f cs16n60p.pdf pdf_icon

CS16N60A8H

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS

Otros transistores... CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, CS150, CS150N03A8, CS150N04A8, CS15N60, IRF1405, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H, CS1N60B1R, CS1N60B3R, CS1N60C1H