Справочник MOSFET. CS16N60A8H

 

CS16N60A8H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS16N60A8H
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 180 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 16 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 54 nC
   Время нарастания (tr): 52 ns
   Выходная емкость (Cd): 18.5 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для CS16N60A8H

 

 

CS16N60A8H Datasheet (PDF)

 ..1. Size:426K  wuxi china
cs16n60a8h.pdf

CS16N60A8H
CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:426K  crhj
cs16n60 a8h.pdf

CS16N60A8H
CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:306K  crhj
cs16n60f a9h.pdf

CS16N60A8H
CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.3. Size:776K  convert
cs16n60f cs16n60p.pdf

CS16N60A8H
CS16N60A8H

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top