CS16N60A8H PDF and Equivalents Search

 

CS16N60A8H Specs and Replacement

Type Designator: CS16N60A8H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 18.5 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220AB

CS16N60A8H substitution

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CS16N60A8H datasheet

 ..1. Size:426K  wuxi china
cs16n60a8h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.1. Size:426K  crhj
cs16n60 a8h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.2. Size:306K  crhj
cs16n60f a9h.pdf pdf_icon

CS16N60A8H

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

 7.3. Size:776K  convert
cs16n60f cs16n60p.pdf pdf_icon

CS16N60A8H

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS... See More ⇒

Detailed specifications: CS13N50A8H , CS13N50FA9H , CS1405 , CS140N10A , CS150 , CS150N03A8 , CS150N04A8 , CS15N60 , IRF1405 , CS19N40A8H , CS19N40AN , CS1N50A1 , CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H .

Keywords - CS16N60A8H MOSFET specs

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