CS19N40A8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS19N40A8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 276 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TO-220AB

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CS19N40A8H datasheet

 ..1. Size:426K  wuxi china
 cs19n40a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:438K  wuxi china
 cs19n40an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:426K  crhj
 cs19n40 a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:438K  crhj
 cs19n40 an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... CS13N50FA9H, CS1405, CS140N10A, CS150, CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, 7N60, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H, CS1N60B1R, CS1N60B3R, CS1N60C1H, CS1N60C3H