CS19N40A8H Datasheet. Specs and Replacement

Type Designator: CS19N40A8H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 276 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-220AB

  📄📄 Copy 

CS19N40A8H substitution

- MOSFET ⓘ Cross-Reference Search

 

CS19N40A8H datasheet

 ..1. Size:426K  wuxi china
 cs19n40a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 6.1. Size:438K  wuxi china
 cs19n40an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 7.1. Size:426K  crhj
 cs19n40 a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.2. Size:438K  crhj
 cs19n40 an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

SHOW MORE

Detailed specifications: CS13N50FA9H, CS1405, CS140N10A, CS150, CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, 7N60, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H, CS1N60B1R, CS1N60B3R, CS1N60C1H, CS1N60C3H

Keywords - CS19N40A8H MOSFET specs

 CS19N40A8H cross reference

 CS19N40A8H equivalent finder

 CS19N40A8H pdf lookup

 CS19N40A8H substitution

 CS19N40A8H replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility