CS19N40A8H - аналоги и даташиты транзистора

 

CS19N40A8H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CS19N40A8H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 76 ns
   Cossⓘ - Выходная емкость: 276 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: TO-220AB
 

 Аналог (замена) для CS19N40A8H

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS19N40A8H Datasheet (PDF)

 ..1. Size:426K  wuxi china
 cs19n40a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:438K  wuxi china
 cs19n40an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:426K  crhj
 cs19n40 a8h.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:438K  crhj
 cs19n40 an.pdf pdf_icon

CS19N40A8H

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS13N50FA9H , CS1405 , CS140N10A , CS150 , CS150N03A8 , CS150N04A8 , CS15N60 , CS16N60A8H , IRF830 , CS19N40AN , CS1N50A1 , CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H .

History: AON7407

 

 
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