CS1N70A3H-G Todos los transistores

 

CS1N70A3H-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS1N70A3H-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 4.1 nC
   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 16 Ohm
   Paquete / Cubierta: TO-251
 

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CS1N70A3H-G Datasheet (PDF)

 ..1. Size:443K  wuxi china
 cs1n70a3h-g.pdf pdf_icon

CS1N70A3H-G

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.1. Size:496K  jilin sino
 jcs1n70tc.pdf pdf_icon

CS1N70A3H-G

N RN-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10VQg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction

 8.2. Size:445K  crhj
 cs1n70 a3h-g.pdf pdf_icon

CS1N70A3H-G

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.3. Size:397K  convert
 cs1n70su cs1n70sf.pdf pdf_icon

CS1N70A3H-G

nvertCS1N70SU, CS1N70SFSuzhou Convert Semiconductor Co ., Ltd.700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS1N70SU TO-251 CS1N70SUCS

MOSTRAR MÁS

Otros transistores... CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , CS1N65B3 , AO4468 , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 .

 

 
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