CS1N70A3H-G Datasheet and Replacement

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

N RN-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10VQg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

nvertCS1N70SU, CS1N70SFSuzhou Convert Semiconductor Co ., Ltd.700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS1N70SU TO-251 CS1N70SUCS